IMBG65R072M1HXTMA1
Part NoIMBG65R072M1HXTMA1
ManufacturerInfineon
DescriptionSILICON CARBIDE MOSFET PG-TO263-
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSIC™ M1
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C33A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)94mOhm @ 13.3A, 18V
RdsOn(Max)@Id5.7V @ 4mA
Vgs22 nC @ 18 V
Vgs(th)(Max)@Id+23V, -5V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds140W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePG-TO263-7-12
MountingTypeTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SupplierDevicePackage744 pF @ 400 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5474
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.0062 | |
| 10 | 9.8061 | |
| 100 | 9.5059 | |
| 1000 | 9.2057 | |
| 10000 | 8.8055 |
Associated Product
