IMDQ75R016M1HXUMA1
Part NoIMDQ75R016M1HXUMA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs15mOhm @ 41.5A, 20A
Vgs(th) (Max) @ Id5.6V @ 14.9mA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 18 V
Vgs (Max)+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds2869 pF @ 500 V
FET Feature-
Power Dissipation (Max)384W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22-1
Package / Case22-PowerBSOP Module
Grade-
Qualification-
In Stock:
607
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.76 | |
| 10 | 19.365 | |
| 100 | 18.77 | |
| 1000 | 18.18 | |
| 10000 | 17.39 |
Associated Product
