IMDQ75R040M1HXUMA1
Part NoIMDQ75R040M1HXUMA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs37mOhm @ 16.6A, 20V
Vgs(th) (Max) @ Id5.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 18 V
Vgs (Max)+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds1135 pF @ 500 V
FET Feature-
Power Dissipation (Max)211W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22-1
Package / Case22-PowerBSOP Module
In Stock:
748
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.21 | |
| 10 | 10.006 | |
| 100 | 9.7 | |
| 1000 | 9.39 | |
| 10000 | 8.98 |
Associated Product
