IMW120R020M1HXKSA1
Part NoIMW120R020M1HXKSA1
ManufacturerInfineon
DescriptionSIC DISCRETE
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C98A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)26.9mOhm @ 41A, 18V
RdsOn(Max)@Id5.2V @ 17.6mA
Vgs83 nC @ 18 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)3460 nF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature375W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2564
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 39.6244 | |
| 10 | 38.8319 | |
| 100 | 37.6432 | |
| 1000 | 36.4544 | |
| 10000 | 34.8695 |
Associated Product
