IMW120R350M1HXKSA1
Part NoIMW120R350M1HXKSA1
ManufacturerInfineon
DescriptionSICFET N-CH 1.2KV 4.7A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C4.7A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)455mOhm @ 2A, 18V
RdsOn(Max)@Id5.7V @ 1mA
Vgs5.3 nC @ 18 V
Vgs(th)(Max)@Id+23V, -7V
Vgs(Max)182 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-3-41
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7113
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.362 | |
| 10 | 7.2148 | |
| 100 | 6.9939 | |
| 1000 | 6.773 | |
| 10000 | 6.4786 |
Associated Product
