IMW65R020M2HXKSA1
Part NoIMW65R020M2HXKSA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™ Gen 2
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs18mOhm @ 46.9A, 20V
Vgs(th) (Max) @ Id5.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds2038 pF @ 400 V
FET Feature-
Power Dissipation (Max)273W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-40
Package / CaseTO-247-3
Grade-
Qualification-
In Stock:
239
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.0 | |
| 10 | 19.6 | |
| 100 | 19.0 | |
| 1000 | 18.4 | |
| 10000 | 17.6 |
Associated Product
