IMW65R027M1HXKSA1
Part NoIMW65R027M1HXKSA1
ManufacturerInfineon
DescriptionMOSFET 650V NCH SIC TRENCH
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSIC™ M1
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C47A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)34mOhm @ 38.3A, 18V
RdsOn(Max)@Id5.7V @ 11mA
Vgs62 nC @ 18 V
Vgs(th)(Max)@Id+23V, -5V
Vgs(Max)2131 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature189W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-3-41
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7286
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 18.245 | |
| 10 | 17.8801 | |
| 100 | 17.3328 | |
| 1000 | 16.7854 | |
| 10000 | 16.0556 |
Associated Product
