IMW65R072M1HXKSA1
Part NoIMW65R072M1HXKSA1
ManufacturerInfineon
DescriptionMOSFET 650V NCH SIC TRENCH
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesCoolSIC™ M1
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)94mOhm @ 13.3A, 18V
RdsOn(Max)@Id5.7V @ 4mA
Vgs22 nC @ 18 V
Vgs(th)(Max)@Id+23V, -5V
Vgs(Max)744 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature96W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-3-41
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4737
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.68 | |
| 10 | 11.4464 | |
| 100 | 11.096 | |
| 1000 | 10.7456 | |
| 10000 | 10.2784 |
Associated Product
