IMZA65R050M2HXKSA1
Part NoIMZA65R050M2HXKSA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesCoolSiC™ Gen 2
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs46mOhm @ 18.2A, 20V
Vgs(th) (Max) @ Id5.6V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 400 V
FET Feature-
Power Dissipation (Max)153W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-8
Package / CaseTO-247-4
Grade-
Qualification-
In Stock:
2519
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.66 | |
| 10 | 11.427 | |
| 100 | 11.08 | |
| 1000 | 10.73 | |
| 10000 | 10.26 |
Associated Product
