IMZA65R072M1HXKSA1
Part NoIMZA65R072M1HXKSA1
ManufacturerInfineon
DescriptionMOSFET 650V NCH SIC TRENCH
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn94mOhm @ 13.3A, 18V
MinRdsOn)5.7V @ 4mA
RdsOn(Max)@Id22 nC @ 18 V
Vgs+23V, -5V
Vgs(th)(Max)@Id744 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds96W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO247-4-3
MountingTypeTO-247-4
SupplierDevicePackage18V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4716
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.3157 | |
| 10 | 11.0894 | |
| 100 | 10.7499 | |
| 1000 | 10.4104 | |
| 10000 | 9.9578 |
Associated Product
