IMZA65R107M1HXKSA1
Part NoIMZA65R107M1HXKSA1
ManufacturerInfineon
DescriptionMOSFET 650V NCH SIC TRENCH
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSIC™ M1
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn142mOhm @ 8.9A, 18V
MinRdsOn)5.7V @ 3mA
RdsOn(Max)@Id15 nC @ 18 V
Vgs+23V, -5V
Vgs(th)(Max)@Id496 pF @ 400 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds75W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO247-3-41
MountingTypeTO-247-3
SupplierDevicePackage18V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6385
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.486 | |
| 10 | 9.2963 | |
| 100 | 9.0117 | |
| 1000 | 8.7271 | |
| 10000 | 8.3477 |
Associated Product
