IMZA75R027M1HXKSA1
Part NoIMZA75R027M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C60A (Tj)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs25mOhm @ 24.5A, 20V
Vgs(th) (Max) @ Id5.6V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 18 V
Vgs (Max)+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 500 V
FET Feature-
Power Dissipation (Max)234W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4
Package / CaseTO-247-4
In Stock:
240
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 17.12 | |
| 10 | 16.778 | |
| 100 | 16.26 | |
| 1000 | 15.75 | |
| 10000 | 15.07 |
Associated Product
