IMZA75R040M1HXKSA1
Part NoIMZA75R040M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C44A (Tj)
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Rds On (Max) @ Id, Vgs37mOhm @ 16.6A, 20V
Vgs(th) (Max) @ Id5.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 18 V
Vgs (Max)+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds1135 pF @ 500 V
FET Feature-
Power Dissipation (Max)185W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4
Package / CaseTO-247-4
In Stock:
240
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.2 | |
| 10 | 11.956 | |
| 100 | 11.59 | |
| 1000 | 11.22 | |
| 10000 | 10.74 |
Associated Product
