IPB019N08N3
RoHS

IPB019N08N3

Part NoIPB019N08N3
ManufacturerInfineon
Description-
Datasheet Download Now!
ECAD Module IPB019N08N3
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)180A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.9mu03a9@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@270u03bcA
TypeNu6c9fu9053
In Stock: 12878
Pricing
QTY UNIT PRICE EXT PRICE
1 3.8929
10 3.815
100 3.6982
1000 3.5814
10000 3.4257
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SQ1922EEH-T1_GE3
SQ1922EEH-T1_GE3
Vishay Siliconix
MOSFET 2N-CH 20V 0.84A SC70-6
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon
MOSFET P-CH 60V 150MA SOT323-3
IPW65R018CFD7XKSA1
IPW65R018CFD7XKSA1
Infineon
650 V COOLMOS CFD7 SUPERJUNCTION
DMNH4006SK3-13
DMNH4006SK3-13
Diodes Inc.
MOSFET N-CH 40V 18A/90A TO252
R6020FNJTL
R6020FNJTL
ROHM
MOSFET N-CH 600V 20A LPT
DMWSH120H43SM3
DMWSH120H43SM3
Diodes Incorporated
SIC MOSFET BVDSS: >1000V TO247 T