IPB051NE8NG
Part NoIPB051NE8NG
ManufacturerInfineon
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesOptiMOS™2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)85 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.1mOhm @ 100A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs180 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)12100 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-3-2
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18153
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3448 | |
| 10 | 1.3179 | |
| 100 | 1.2776 | |
| 1000 | 1.2372 | |
| 10000 | 1.1834 |
Associated Product
