IPB091N06N G
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IPB091N06N G

Part NoIPB091N06N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CHAN D2PAK
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ECAD Module IPB091N06N G
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Specification
PackageTape & Reel (TR)
SeriesOptiMOS™
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs8.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 30 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
In Stock: 2955
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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