IPB12CN10N G

Part NoIPB12CN10N G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 67A D2PAK

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Specification

PackageTape & Reel (TR)

SeriesOptiMOS™

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)100 V

Current-ContinuousDrain(Id)@25°C67A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)12.6mOhm @ 67A, 10V

RdsOn(Max)@Id4V @ 83µA

Vgs65 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)4320 pF @ 50 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature125W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureSurface Mount

MountingTypePG-TO263-3

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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