IPD048N06L3GBTMA1
RoHS

IPD048N06L3GBTMA1

Part NoIPD048N06L3GBTMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 60V 90A TO252-3
Datasheet Download Now!
ECAD Module IPD048N06L3GBTMA1
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C90A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.8mOhm @ 90A, 10V
RdsOn(Max)@Id2.2V @ 58µA
Vgs50 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)8400 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature115W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO252-3
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 12562
Pricing
QTY UNIT PRICE EXT PRICE
1 1.066
10 1.0447
100 1.0127
1000 0.9807
10000 0.9381
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SIR844DP-T1-GE3
SIR844DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 50A PPAK SO-8
SI7964DP-T1-E3
SI7964DP-T1-E3
Vishay Siliconix
MOSFET 2N-CH 60V 6.1A PPAK SO8
IPW60R080P7XKSA1
IPW60R080P7XKSA1
Infineon
MOSFET N-CH 600V 37A TO247-3
BSP129L6327HTSA1
BSP129L6327HTSA1
Infineon
MOSFET N-CH 240V 350MA SOT223-4
GT650N15K
GT650N15K
Goford Semiconductor
MOSFET N-CH 150V 20A TO-252
AO3400A-ML
AO3400A-ML
MOSLEADER
30V 5.8A 1.4W N Channel SOT-23