IPD082N10N3
RoHS

IPD082N10N3

Part NoIPD082N10N3
ManufacturerInfineon
Description-
Datasheet Download Now!
ECAD Module IPD082N10N3
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.6mu03a9@10V,73A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@75u03bcA
TypeNu6c9fu9053
In Stock: 13236
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8723
10 0.8548
100 0.8287
1000 0.8025
10000 0.7676
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
GTRB097152FC-V1-R2
GTRB097152FC-V1-R2
MACOM
RF MOSFET HEMT H-37248C-4 250PCS
IRFP250
IRFP250
STMicroelectronics
MOSFET N-CH 200V 33A TO247-3
SPD100N03S2L-04
SPD100N03S2L-04
Infineon
MOSFET N-CH 30V 100A TO252-5
NTLUS4C16NTBG
NTLUS4C16NTBG
onsemi
MOSFET N-CH 30V 6.1A 6UDFN
DMP3017SFK-7
DMP3017SFK-7
Diodes Inc.
MOSFET P-CH 30V 10.4A 6UDFN
ZVN4206ASTOA
ZVN4206ASTOA
Diodes Inc.
MOSFET N-CH 60V 600MA E-LINE
NVMJST2D6N08HTXG
NVMJST2D6N08HTXG
onsemi
TRENCH 8 80V LFPAK 5X7
IPN70R1K4P7SATMA1
IPN70R1K4P7SATMA1
Infineon
MOSFET N-CHANNEL 700V 4A SOT223