IPD16CN10N G
Part NoIPD16CN10N G
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 53A TO252-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C53A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)16mOhm @ 53A, 10V
RdsOn(Max)@Id4V @ 61µA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3220 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO252-3
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
24922
Pricing
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Associated Product
