IPD16CN10N G

Part NoIPD16CN10N G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 53A TO252-3

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Specification

PackageTape & Reel (TR)

SeriesOptiMOS™

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)100 V

Current-ContinuousDrain(Id)@25°C53A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)16mOhm @ 53A, 10V

RdsOn(Max)@Id4V @ 61µA

Vgs48 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)3220 pF @ 50 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature100W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureSurface Mount

MountingTypePG-TO252-3

SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 24922
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