IPD35N10S3L26ATMA2
Part NoIPD35N10S3L26ATMA2
ManufacturerInfineon Technologies
DescriptionMOSFET_(75V 120V(
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
GradeAutomotive
QualificationAEC-Q101
In Stock:
2045
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.682 | |
| 10 | 0.668 | |
| 100 | 0.65 | |
| 1000 | 0.63 | |
| 10000 | 0.6 |
Associated Product
