IPD65R600E6ATMA1
Part NoIPD65R600E6ATMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 650V 7.3A TO252-3
Datasheet
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Specification
PackageTape & Reel (TR)
SeriesCoolMOS™ E6
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C7.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 2.1A, 10V
RdsOn(Max)@Id3.5V @ 210µA
Vgs±20V
Vgs(th)(Max)@Id-
Vgs(Max)63W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)PG-TO252-3
OperatingTemperatureTO-252-3, DPak (2 Leads + Tab), SC-63
MountingType23 nC @ 10 V
SupplierDevicePackage440 pF @ 100 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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11937
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