IPD65R660CFDBTMA1
Part NoIPD65R660CFDBTMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 650V 6A TO252-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesCoolMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)660mOhm @ 2.1A, 10V
RdsOn(Max)@Id4.5V @ 200µA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)615 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature62.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO252-3
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8765
Pricing
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Associated Product
