IPD70N10S312ATMA2
RoHS

IPD70N10S312ATMA2

Part NoIPD70N10S312ATMA2
ManufacturerInfineon Technologies
DescriptionMOSFET_(75V 120V(
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ECAD Module IPD70N10S312ATMA2
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Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4355 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
GradeAutomotive
QualificationAEC-Q101
In Stock: 2007
Pricing
QTY UNIT PRICE EXT PRICE
1 1.095
10 1.073
100 1.04
1000 1.01
10000 0.96
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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