IPD80R3K3P7ATMA1
Part NoIPD80R3K3P7ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 800V 1.9A TO252-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesCoolMOS™ P7
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C1.9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.3Ohm @ 590mA, 10V
RdsOn(Max)@Id3.5V @ 30µA
Vgs5.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)120 pF @ 500 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature18W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePG-TO252-3
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
Qualification
In Stock:
14263
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3744 | |
| 10 | 0.3669 | |
| 100 | 0.3557 | |
| 1000 | 0.3444 | |
| 10000 | 0.3295 |
Associated Product
