IPG20N06S2L65AAUMA1
RoHS

IPG20N06S2L65AAUMA1

Part NoIPG20N06S2L65AAUMA1
ManufacturerInfineon
DescriptionMOSFET 2N-CH 55V 20A 8TDSON
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ECAD Module IPG20N06S2L65AAUMA1
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Specification
PackageBulk
SeriesOptiMOS®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)55V
Current-ContinuousDrain(Id)@25°C20A (Tc)
RdsOn(Max)@Id65mOhm @ 15A, 10V
Vgs2V @ 14µA
Vgs(th)(Max)@Id12nC @ 10V
GateCharge(Qg)(Max)@Vgs410pF @ 25V
InputCapacitance(Ciss)(Max)@Vds43W (Tc)
Power-Max-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount, Wettable Flank
MountingType8-PowerVDFN
Package/CasePG-TDSON-8-10
SupplierDevicePackage-
Grade-
Qualification
In Stock: 12577
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product