IPI023NE7N3 G
Part NoIPI023NE7N3 G
ManufacturerInfineon
DescriptionMOSFET N-CH 75V 120A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)75 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)2.3mOhm @ 100A, 10V
RdsOn(Max)@Id3.8V @ 273µA
Vgs206 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs(Max)14400 pF @ 37.5 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
13448
Pricing
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Associated Product
