IPI041N12N3GAKSA1
Part NoIPI041N12N3GAKSA1
ManufacturerInfineon
DescriptionMOSFET N-CH 120V 120A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.1mOhm @ 100A, 10V
RdsOn(Max)@Id4V @ 270µA
Vgs211 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)13800 pF @ 60 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5484
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.1935 | |
| 10 | 5.0896 | |
| 100 | 4.9338 | |
| 1000 | 4.778 | |
| 10000 | 4.5703 |
Associated Product
