IPI086N10N3GXKSA1
Part NoIPI086N10N3GXKSA1
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 80A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)8.6mOhm @ 73A, 10V
RdsOn(Max)@Id3.5V @ 75µA
Vgs55 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3980 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10217
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6274 | |
| 10 | 1.5949 | |
| 100 | 1.546 | |
| 1000 | 1.4972 | |
| 10000 | 1.4321 |
Associated Product
