IPI126N10N3GXKSA1
Part NoIPI126N10N3GXKSA1
ManufacturerInfineon
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesOptiMOS™ 3
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)12.6mOhm @ 46A, 10V
RdsOn(Max)@Id3.5V @ 46µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2500 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature94W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3082
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7452 | |
| 10 | 0.7303 | |
| 100 | 0.7079 | |
| 1000 | 0.6856 | |
| 10000 | 0.6558 |
Associated Product
