IPI26CN10N G
Part NoIPI26CN10N G
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 35A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)26mOhm @ 35A, 10V
RdsOn(Max)@Id4V @ 39µA
Vgs31 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2070 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature71W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
22162
Pricing
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Associated Product
