IPI320N203G
Part NoIPI320N203G
ManufacturerInfineon
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesOptiMOS™ 3
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C34A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)32mOhm @ 34A, 10V
RdsOn(Max)@Id4V @ 90µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2350 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature136W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3166
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9635 | |
| 10 | 1.9242 | |
| 100 | 1.8653 | |
| 1000 | 1.8064 | |
| 10000 | 1.7279 |
Associated Product
