IPP06CN10LG
Part NoIPP06CN10LG
ManufacturerInfineon
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesOptiMOS™ 2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6.2mOhm @ 100A, 10V
RdsOn(Max)@Id2.4V @ 180µA
Vgs124 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)11900 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature214W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO220-3-1
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17709
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4065 | |
| 10 | 1.3784 | |
| 100 | 1.3362 | |
| 1000 | 1.294 | |
| 10000 | 1.2377 |
Associated Product
