IPP06CN10N G

IPP06CN10N G

Part NoIPP06CN10N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 100A TO220-3
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ECAD Module IPP06CN10N G
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Specification
PackageTube
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn6.5mOhm @ 100A, 10V
MinRdsOn)4V @ 180µA
RdsOn(Max)@Id9200 pF @ 50 V
Vgs-
Vgs(th)(Max)@Id214W (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeaturePG-TO220-3
PowerDissipation(Max)TO-220-3
OperatingTemperature10V
MountingType±20V
SupplierDevicePackage139 nC @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product