IPP091N06N G
Part NoIPP091N06N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CHAN TO-220
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesOptiMOS™
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs9.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 30 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
In Stock:
2446
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
