IPP339N20NM6AKSA1
Part NoIPP339N20NM6AKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™ 6
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C6.8A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs31.8mOhm @ 26A, 15V
Vgs(th) (Max) @ Id4.5V @ 52µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 100 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
Grade-
Qualification-
In Stock:
2415
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.35 | |
| 10 | 3.283 | |
| 100 | 3.18 | |
| 1000 | 3.08 | |
| 10000 | 2.95 |
Associated Product
