IPP65R190E6XKSA1
Part NoIPP65R190E6XKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 20.2A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolMOS™
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20.2A (Tc)
DriveVoltage(MaxRdsOn190mOhm @ 7.3A, 10V
MinRdsOn)3.5V @ 730µA
RdsOn(Max)@Id73 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id1620 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds151W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperaturePG-TO220-3
MountingTypeTO-220-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6799
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.9088 | |
| 10 | 3.8306 | |
| 100 | 3.7134 | |
| 1000 | 3.5961 | |
| 10000 | 3.4397 |
Associated Product
