IPS110N12N3GBKMA1
RoHS

IPS110N12N3GBKMA1

Part NoIPS110N12N3GBKMA1
ManufacturerInfineon
DescriptionMOSFET N-CH 120V 75A TO251-3
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ECAD Module IPS110N12N3GBKMA1
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Specification
PackageTube
SeriesOptiMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C75A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)11mOhm @ 75A, 10V
RdsOn(Max)@Id4V @ 83µA
Vgs65 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4310 pF @ 60 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature136W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO251-3-11
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 5926
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product