IRF520N
Part NoIRF520N
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 9.7A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C9.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)200mOhm @ 5.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)330 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
15028
Pricing
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Associated Product
