IRF630NLPBF
Part NoIRF630NLPBF
ManufacturerInfineon
DescriptionMOSFET N-CH 200V 9.3A TO262
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)300mOhm @ 5.4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)575 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature82W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
12150
Pricing
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Associated Product
