IRF640NLPBF
Part NoIRF640NLPBF
ManufacturerInfineon
DescriptionMOSFET N-CH 200V 18A TO262
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)150mOhm @ 11A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs67 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1160 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17563
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6198 | |
| 10 | 1.5874 | |
| 100 | 1.5388 | |
| 1000 | 1.4902 | |
| 10000 | 1.4254 |
Associated Product
