IRF8010PBF
Part NoIRF8010PBF
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 80A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C80A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)15mOhm @ 45A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs120 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3830 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature260W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
35318
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.806 | |
| 10 | 1.7699 | |
| 100 | 1.7157 | |
| 1000 | 1.6615 | |
| 10000 | 1.5893 |
Associated Product
