IRF8113
Part NoIRF8113
ManufacturerInfineon
DescriptionMOSFET N-CH 30V 17.2A 8SO
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesHEXFET®
Rds On (Max) @ Id, Vgs5.6 mOhm @ 17.2A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Other Names*IRF8113
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds2910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs36nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C17.2A (Ta)
In Stock:
16328
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Associated Product
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