ISC130N20NM6ATMA1
RoHS

ISC130N20NM6ATMA1

Part NoISC130N20NM6ATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET
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ECAD Module ISC130N20NM6ATMA1
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesOptiMOS™ 6
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.8A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs11.7mOhm @ 50A, 15V
Vgs(th) (Max) @ Id4.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 100 V
FET Feature-
Power Dissipation (Max)3W (Ta), 242W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-3
Package / Case8-PowerTDFN
Grade-
Qualification-
In Stock: 2289
Pricing
QTY UNIT PRICE EXT PRICE
1 5.82
10 5.704
100 5.53
1000 5.35
10000 5.12
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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