SI4435DY
Part NoSI4435DY
ManufacturerInfineon
DescriptionMOSFET P-CH 30V 8A 8SO
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)20mOhm @ 8A, 10V
RdsOn(Max)@Id1V @ 250µA
Vgs60 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2320 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SO
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
24719
Pricing
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Associated Product
