SPB21N10 G
RoHS

SPB21N10 G

Part NoSPB21N10 G
ManufacturerInfineon
DescriptionMOSFET N-CH 100V 21A TO263-3
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ECAD Module SPB21N10 G
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Specification
PackageTape & Reel (TR)
SeriesSIPMOS®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)80mOhm @ 15A, 10V
RdsOn(Max)@Id4V @ 44µA
Vgs38.4 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)865 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature90W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TO263-3-2
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 7423
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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