SPU30N03S2-08
RoHS

SPU30N03S2-08

Part NoSPU30N03S2-08
ManufacturerInfineon
DescriptionMOSFET N-CH 30V 30A IPAK
Datasheet Download Now!
ECAD Module SPU30N03S2-08
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id4V @ 85µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageP-TO251-3
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs8.2 mOhm @ 30A, 10V
Power Dissipation (Max)125W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Other NamesSP000014129 SPU30N03S208X
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 30A (Tc) 125W (Tc) Through Hole P-TO251-3
Current - Continuous Drain (Id) @ 25°C30A (Tc)
In Stock: 8542
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IRFB4115GPBF
IRFB4115GPBF
Infineon
MOSFET N-CH 150V 104A TO220AB
GPIHV30SB5L
GPIHV30SB5L
GaNPower
GANFET N-CH 1200V 30A TO263-5L
BSZ040N04LSGATMA1
BSZ040N04LSGATMA1
Infineon
MOSFET N-CH 40V 18A/40A 8TSDSON
IXFX140N30P
IXFX140N30P
IXYS
MOSFET N-CH 300V 140A PLUS247-3
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
PJD60P04E-AU_L2_006A1
PJD60P04E-AU_L2_006A1
Panjit
40V P-CHANNEL ENHANCEMENT MODE M
SQJA61EP-T1_GE3
SQJA61EP-T1_GE3
Vishay Siliconix
MOSFET P-CHANNEL 60V 50A TO263