IRF123
Part NoIRF123
ManufacturerInternational Rectifier
DescriptionN-CHANNEL HERMETIC MOS HEXFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5015
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6936 | |
| 10 | 0.6797 | |
| 100 | 0.6589 | |
| 1000 | 0.6381 | |
| 10000 | 0.6104 |
Associated Product
