IRF2907ZSTRL7PP
RoHS

IRF2907ZSTRL7PP

Part NoIRF2907ZSTRL7PP
DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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ECAD Module IRF2907ZSTRL7PP
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Specification
RoHSCompliant
MountSurface Mount
Fall Time44 ns
Rise Time90 ns
Rds On Max3.8 mΩ
Case/PackageTO-263-7
Number of Pins7
Input Capacitance7.58 nF
Power Dissipation300 W
Turn-On Delay Time21 ns
Radiation HardeningNo
Turn-Off Delay Time92 ns
Max Power Dissipation300 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)160 A
Drain to Source Voltage (Vdss)75 V
Drain to Source Breakdown Voltage75 V
In Stock: 9230
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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