IRF520VS
RoHS

IRF520VS

Part NoIRF520VS
DescriptionPower Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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ECAD Module IRF520VS
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Specification
RoHSCompliant
Case/PackageD2PAK
Continuous Drain Current (ID)9.6 A
Drain to Source Voltage (Vdss)100 V
In Stock: 11246
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